CM30MD1-12H Mitsubishi Electric Semiconductor IGBT Module Datasheet. existencias, precio

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CM30MD1-12H

Mitsubishi Electric Semiconductor
CM30MD1-12H
CM30MD1-12H CM30MD1-12H
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Part Number CM30MD1-12H
Manufacturer Mitsubishi Electric Semiconductor
Description MITSUBISHI IGBT MODULES CM30MD1-12H MEDIUM POWER SWITCHING USE FLAT-BASE TYPE, INSULATED TYPE CM30MD1-12H ¡IC ... 30A ¡VCES ....
Features MD1-12H MEDIUM POWER SWITCHING USE FLAT-BASE TYPE, INSULATED TYPE MAXIMUM RATINGS INVERTER PART Symbol VCES VGES IC ICM IE (Note. 1) IEM (Note. 1) PC (Note. 3) (Tj = 25°C) Parameter Collector-emitter voltage Gate-emitter voltage Collector Current Emitter Current Maximum collector dissipation G
  – E Short C
  – E Short TC = 25°C PULSE TC = 25°C PULSE Tf = 25°C Condition (Note. 2) (Note. 2) Rating 600 ±20 30 60 30 60 66 Unit V V A A A A W CONVERTER PART Symbol VRRM Ea IO IFSM I2t Parameter Repetitive peak reverse voltage Recommended AC input voltage DC output current Surge (non-repetitive)...

Document Datasheet CM30MD1-12H Data Sheet
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