33N10 |
Part Number | 33N10 |
Manufacturer | Inchange Semiconductor |
Description | isc N-Channel MOSFET Transistor FEATURES · Static drain-source on-resistance: RDS(on) ≤60mΩ · Enhancement mode · Fast Switching Speed · 100% avalanche tested · Minimum Lot-to-Lot variations for robus... |
Features |
· Static drain-source on-resistance: RDS(on) ≤60mΩ · Enhancement mode · Fast Switching Speed · 100% avalanche tested · Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION · Switching power supplies,converters,AC and DC motor controls ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 100 VGS Gate-Source Voltage ±30 ID Drain Current-Continuous 33 IDM Drain Current-Single Pulsed 132 PD Total Dissipation @TC=25℃ 150 Tj Max. Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V... |
Document |
33N10 Data Sheet
PDF 282.45KB |
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | 33N10 |
Fairchild Semiconductor |
FQP33N10 | |
2 | 33N25 |
Fairchild Semiconductor |
FDB33N25 | |
3 | 3302 |
VMI |
(3302x - 3310x) Three Phase Bridge | |
4 | 3302F |
VMI |
(3302x - 3310x) Three Phase Bridge | |
5 | 3302UF |
VMI |
(3302x - 3310x) Three Phase Bridge | |
6 | 3306 |
VMI |
(3302x - 3310x) Three Phase Bridge |