30N10 |
Part Number | 30N10 |
Manufacturer | Inchange Semiconductor |
Description | INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 30N10 ·FEATURES ·Drain Current ID= 30A@ TC=25℃ ·Drain Source Voltage- : VDSS= 100V(Min) ·Static Drain-Source On-Resis... |
Features |
·Drain Current ID= 30A@ TC=25℃ ·Drain Source Voltage- : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.77Ω(Max) ·Fast Switching ·APPLICATIONS ·Switching power supplies,converters,AC and DC motor controls ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS Drain-Source Voltage Gate-Source Voltage-Continuous 100 ±30 V V ID Drain Current-Continuous 30 A PD Total Dissipation @TC=25℃ 79 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ isc website:www.iscsemi.cn 1 isc & iscsemi is registered trademark PDF pdfFac... |
Document |
30N10 Data Sheet
PDF 59.13KB |
Similar Datasheet
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | 30N12 |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
2 | 30N15 |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
3 | 30N05 |
Inchange Semiconductor |
N-Channel MOSFET | |
4 | 30N06 |
Inchange Semiconductor |
N-Channel MOSFET | |
5 | 30N06 |
UTC |
N-CHANNEL POWER MOSFET | |
6 | 30N06-Q |
Unisonic Technologies |
N-CHANNEL POWER MOSFET |