CM1200HB-66H Powerex Power Semiconductors IGBT Module Datasheet. existencias, precio

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CM1200HB-66H

Powerex Power Semiconductors
CM1200HB-66H
CM1200HB-66H CM1200HB-66H
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Part Number CM1200HB-66H
Manufacturer Powerex Power Semiconductors
Description MITSUBISHI HVIGBT MODULES CM1200HB-66H HIGH POWER SWITCHING USE 2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules INSULATED TYPE CM1200HB-66H q IC ...
Features = 25°C) Symbol VCES VGES IC ICM I E (Note 2) I EM(Note 2) P C (Note 3) Tj Tstg Viso — — Item Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum collector dissipation Junction temperature Storage temperature Isolation voltage Mounting torque Mass Conditions VGE = 0V VCE = 0V TC = 25°C Pulse TC = 25°C Pulse TC = 25°C, IGBT part Ratings 3300 ±20 1200 2400 1200 2400 15600
  –40 ~ +150
  –40 ~ +125 6000 6.67 ~ 13.00 2.84 ~ 6.00 0.88 ~ 2.00 2.2 Unit V V A A A A W °C °C V N
·m N
·m N
·m kg (Note 1) (Note 1) — — Charged part to base plate, rms, sinusoidal, AC 60Hz 1min...

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