CM1200HB-66H |
Part Number | CM1200HB-66H |
Manufacturer | Powerex Power Semiconductors |
Description | MITSUBISHI HVIGBT MODULES CM1200HB-66H HIGH POWER SWITCHING USE 2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules INSULATED TYPE CM1200HB-66H q IC ... |
Features |
= 25°C)
Symbol VCES VGES IC ICM I E (Note 2) I EM(Note 2) P C (Note 3) Tj Tstg Viso — — Item Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum collector dissipation Junction temperature Storage temperature Isolation voltage Mounting torque Mass Conditions VGE = 0V VCE = 0V TC = 25°C Pulse TC = 25°C Pulse TC = 25°C, IGBT part Ratings 3300 ±20 1200 2400 1200 2400 15600 –40 ~ +150 –40 ~ +125 6000 6.67 ~ 13.00 2.84 ~ 6.00 0.88 ~ 2.00 2.2 Unit V V A A A A W °C °C V N ·m N ·m N ·m kg (Note 1) (Note 1) — — Charged part to base plate, rms, sinusoidal, AC 60Hz 1min... |
Document |
CM1200HB-66H Data Sheet
PDF 51.13KB |
Similar Datasheet
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1 | CM1200HB-66H |
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IGBT | |
2 | CM1200HB-50H |
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IGBT | |
3 | CM1200HA-24J |
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IGBT Module | |
4 | CM1200HA-34H |
Powerex Power Semiconductors |
IGBT Module | |
5 | CM1200HA-34H |
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IGBT | |
6 | CM1200HA-50H |
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IGBT |