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10N60 |
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| Part Number | 10N60 |
| Manufacturer | Inchange Semiconductor |
| Description | isc N-Channel MOSFET Transistor ·FEATURES ·Drain Current –ID= 9.5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.73Ω(Max) ·Minimum Lot-to-Lot varia... |
| Features |
·Drain Current –ID= 9.5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.73Ω(Max) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Designed for high efficiency switch mode power supply. ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 9.5 A IDM Drain Current-Single Plused 38 A PD Total Dissipation @TC=25℃ 156 W Tj Max. Operating Junction Temperature 150 ℃ ... |
| Document |
 10N60 Data Sheet
PDF 232.75KB |
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