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FTB1366 |
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| Part Number | FTB1366 |
| Manufacturer | First Silicon |
| Description | SEMICONDUCTOR TECHNICAL DATA FTB1366 FTB1366 TRANSISTOR (PNP) FEATURES Low VCE(sat): VCE(sat)=-1.0V(Max.)(IC/IB=-2A/-0.2A) Complementary to FTD2058 TO-220F 1. BASE 2. COLLECTOR MAXIMUM RATINGS (T... |
| Features |
Low VCE(sat): VCE(sat)=-1.0V(Max.)(IC/IB=-2A/-0.2A) Complementary to FTD2058
TO-220F
1. BASE 2. COLLECTOR
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
-60 V
VCEO
Collector-Emitter Voltage
-60 V
VEBO
Emitter-Base Voltage
-7 V
IC
Collector Current -Continuous
-3
A
PC Collector power dissipation
2W
TJ Junction temperature
150 ℃
Tstg Storage Temperature
-55-150
℃
3. EMITTER
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter Collector-base breakdown voltage Collector-emitter breakdown volta... |
| Document |
 FTB1366 Data Sheet
PDF 250.84KB |
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