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RB706F-40 |
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| Part Number | RB706F-40 |
| Manufacturer | SEMTECH |
| Description | RB706F-40 SILICON EPITAXIAL SCHOTTKY BARRIER DIODE For low current rectification Features • High reliability • Low reverse current 3 12 Marking Code: ZA Absolute Maximum Ratings (Ta = 25 OC) Param... |
| Features |
• High reliability • Low reverse current 3 12 Marking Code: ZA Absolute Maximum Ratings (Ta = 25 OC) Parameter Repetitive Peak Reverse Voltage Reverse Voltage Average Rectified Forward Current Peak Forward Surge Current (t = 8.3 ms) Junction Temperature Storage Temperature Range Symbol VRM VR IO IFSM Tj Tstg Value 45 40 30 200 125 - 55 to + 125 Unit V V mA mA OC OC Characteristics at Ta = 25 OC Parameter Forward Voltage at IF = 1 mA Reverse Current at VR = 10 V Reverse Breakdown Voltage at IR = 10 µA Capacitance between Terminals at VR = 1 V, f = 1 MHz Symbol Min. Typ. Max. Unit VF - ... |
| Document |
 RB706F-40 Data Sheet
PDF 214.24KB |
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Desde 2024. D4U Semiconductor.
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