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5N80 |
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| Part Number | 5N80 |
| Manufacturer | Inchange Semiconductor |
| Description | ·Drain Current ID= 5.5A@ TC=25℃ ·Drain Source Voltage : VDSS= 800V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS . ·De... |
| Features |
1 isc & iscsemi is registered trademark
isc N-Channel MOSFET Transistor
·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 250µA VGS(th) Gate Threshold Voltage VDS= VGS; ID=250µA VSD Diode Forward On-Voltage IS=5.5A ;VGS= 0 RDS(on) Drain-Source On-Resistance VGS= 10V; ID=2.5A IGSS Gate-Body Leakage Current VGS= ±30V;VDS= 0 IDSS Zero Gate Voltage Drain Current VDS= 800V; VGS= 0 5N80 MIN TYPE MAX UNIT 800 V 2.0 4.0 V 1.5 V 2.6 Ω ±100 nA 250 µA NOTICE： ISC reserves the rights to make changes of the... |
| Document |
 5N80 Data Sheet
PDF 227.53KB |
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