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ACE4953B |
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| Part Number | ACE4953B |
| Manufacturer | ACE Technology |
| Description | The ACE4953B uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge. This device is suitable for use as a load switch or in PWM applications. Features VDS(V)=-2... |
| Features |
VDS(V)=-20V ID=-5.5A (VGS=-10V) RDS(ON)<55mΩ (VGS=-10V) RDS(ON)<58mΩ (VGS=-4.5V) RDS(ON)<80mΩ (VGS=-2.5V) Absolute Maximum Ratings Parameter Symbol Max Unit Drain-Source Voltage Gate-Source Voltage Drain Current (Continuous) * AC TA=25 OC TA=70 OC VDSS VGSS ID -20 V ±12 V -5.5 A -4.4 Drain Current (Pulse) * B IDM -25 A Power Dissipation TA=25 OC TA=70 OC PD 2 W 1.5 Operating and Storage Temperature Range TJ,TSTG -55 to 150 OC Packaging Type SOP-8 VER 1.2 1 ACE4953B Dual P-Channel Enhancement Mode Field Effect Transistor Ordering information ACE4953B XX + H Halogen ... |
| Document |
 ACE4953B Data Sheet
PDF 778.74KB |
Similar Datasheet
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Desde 2024. D4U Semiconductor.
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