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ACE4922 |
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| Part Number | ACE4922 |
| Manufacturer | ACE Technology |
| Description | The ACE4922 is the Dual N-Channel enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to mini... |
| Features |
N-Channel 20V/0.95A, RDS(ON)=380mΩ@VGS=4.5V 20V/0.75A, RDS(ON)=450mΩ@VGS=2.5V 20V/0.65A, RDS(ON)=800mΩ@VGS=1.8V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability Application Power Management in Note book Portable Equipment Battery Powered System DC/DC Converter Load Switch DSC LCD Display inverter Absolute Maximum Ratings Parameter Symbol Max Unit Drain-Source Voltage VDSS 20 V Gate-Source Voltage VGSS ±20 V Continuous Drain Current (TJ=150℃) TA=25℃ TA=80℃ ID 1.2 A 0.9 Pulsed Drain Current IDM ... |
| Document |
 ACE4922 Data Sheet
PDF 567.99KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | ACE4922BEM |
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Dual N-Channel Enhancement Mode Field Effect Transistor |
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| 2 | ACE4908A |
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Dual P-Channel Enhancement Mode MOSFET |
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| 3 | ACE4940M |
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Dual N-Channel 40-V MOSFET |
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| 4 | ACE4953B |
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Dual P-Channel Enhancement Mode Field Effect Transistor |
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| 5 | ACE4000 |
Lineage Power |
3 Bay / 12 Kilowatt Power Shelf |
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| 6 | ACE4010M |
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N-Channel MOSFET |
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Desde 2024. D4U Semiconductor.
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