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ACE4922BEM |
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| Part Number | ACE4922BEM |
| Manufacturer | ACE Technology |
| Description | The ACE4922B is the Dual N-Channel enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to min... |
| Features |
e Maximum Ratings
Parameter
Symbol Max Unit
Drain-Source Voltage Gate-Source Voltage
Drain Current
Continuous Pulsed
Reverse Drain Current
Continuous Pulsed
Total Power Dissipation
Channel Temperature
Storage Temperature Range
VDSS VGSS
ID IDP*1 IDR IDR*1 Pd*2 Tch Tstg
60 ±20 115 800 115 800 225 150 -55 to150
V V
mA
mA
mW OC OC
Note: 1.
Pw≦10µs, Duty cycle≦1 %。
2. When mounted on a 1*0.75*0.062 inch glass epoxy board。
Electrical CharacteristicsTA=25 OC unless otherwise noted
Parameter
Symbol
Conditions
Min. Typ. Max. Unit
OFF CHARACTERISTICS(Note 2)
Drain-Source Breakdow... |
| Document |
 ACE4922BEM Data Sheet
PDF 654.34KB |
Similar Datasheet
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|---|---|---|---|---|
| 1 | ACE4922 |
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Dual N-Channel Enhancement Mode MOSFET |
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| 2 | ACE4908A |
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Dual P-Channel Enhancement Mode MOSFET |
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| 3 | ACE4940M |
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| 4 | ACE4953B |
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| 5 | ACE4000 |
Lineage Power |
3 Bay / 12 Kilowatt Power Shelf |
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| 6 | ACE4010M |
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N-Channel MOSFET |
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Desde 2024. D4U Semiconductor.
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