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2SK1913 |
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| Part Number | 2SK1913 |
| Manufacturer | Inchange Semiconductor |
| Description | ·Drain Current –ID= 4A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High spe... |
| Features |
250µA
VGS(th) Gate Threshold Voltage
VDS= 10V; ID=1mA
VDF
Body to drain diode forward voltage IF = 4 A, VGS = 0
RDS(on) Drain-Source On-Resistance
VGS= 10V; ID= 2.5A
IGSS
Gate-Body Leakage Current
VGS= ±30V;VDS= 0
IDSS
Zero Gate Voltage Drain Current
VDS=600V; VGS= 0
Ciss Input capacitance
Crss Reverse transfer capacitance
VDS=25V;VGS=0V;fT=1MHz
Coss Output capacitance
tr
Rise time
ton
Turn-on time
tf
Fall time
VGS=10V;ID=2.5A; VDD=200V; RL=80Ω
toff
Turn-off time
MIN TYPE MAX UNIT
600
V
2.1
4
V
0.92 1.41
V
0.9
1.8
Ω
±100 nA
100
µA
880 1400
40
60
pF
1... |
| Document |
 2SK1913 Data Sheet
PDF 214.51KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SK1916 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 2 | 2SK1916-01 |
Fuji Electric |
N-CHANNEL SILICON POWER MOS-FET |
|
| 3 | 2SK1916-01R |
Fuji Electric |
N-CHANNEL SILICON POWER MOS-FET |
|
| 4 | 2SK1917 |
Fuji Electric |
N-CHANNEL SILICON POWER MOSFET |
|
| 5 | 2SK1917 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 6 | 2SK1917-M |
INCHANGE |
N-Channel MOSFET |
|
| 7 | 2SK1917-MR |
Fuji Electric |
N-CHANNEL SILICON POWER MOSFET |
|
| 8 | 2SK1918 |
Hitachi |
Silicon N-Channel MOSFET |
|
| 9 | 2SK1918L |
Hitachi |
Silicon N-Channel MOSFET |
|
| 10 | 2SK1918S |
Hitachi |
Silicon N-Channel MOSFET |
|
Desde 2024. D4U Semiconductor.
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