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NT5DS64M8CG |
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| Part Number | NT5DS64M8CG |
| Manufacturer | Nanya Techology |
| Description | Die C of 512Mb SDRAM devices based using DDR interface. They are all based on Nanya’s 90 nm design process. The 512Mb DDR SDRAM is a high-speed CMOS, dynamic random-access memory containing 536,870,91... |
| Features |
• DDR 512M bit, Die C, based on 90nm design rules • Double data rate architecture: two data transfers per clock cycle • Bidirectional data strobe (DQS) is transmitted and received with data, to be used in capturing data at the receiver • DQS is edge-aligned with data for reads and is centeraligned with data for writes • Differential clock inputs (CK and CK) • Four internal banks for concurrent operation • Data mask (DM) for write data • DLL aligns DQ and DQS transitions with CK transitions • Commands entered on each positive CK edge; data and data mask referenced to both edges of DQS • Burst ... |
| Document |
 NT5DS64M8CG Data Sheet
PDF 2.15MB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | NT5DS64M8CS |
Nanya Techology |
512Mb DDR SDRAM |
|
| 2 | NT5DS64M8AF |
Nanya Techology |
(NT5DSxxMxAF) 512Mb DDR SDRAM |
|
| 3 | NT5DS64M8BF |
Nanya Techology |
(NT5DSxxMxBx) 512Mb DDR SDRAM |
|
| 4 | NT5DS64M8BG |
Nanya Techology |
(NT5DSxxMxBx) 512Mb DDR SDRAM |
|
| 5 | NT5DS64M8BS |
Nanya Techology |
(NT5DSxxMxBx) 512Mb DDR SDRAM |
|
| 6 | NT5DS64M8BT |
Nanya Techology |
(NT5DSxxMxBx) 512Mb DDR SDRAM |
|
Desde 2024. D4U Semiconductor.
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