NT5DS32M16CG |
Part Number | NT5DS32M16CG |
Manufacturer | Nanya Techology |
Description | Die C of 512Mb SDRAM devices based using DDR interface. They are all based on Nanya’s 90 nm design process. The 512Mb DDR SDRAM is a high-speed CMOS, dynamic random-access memory containing 536,870,91... |
Features |
• DDR 512M bit, Die C, based on 90nm design rules • Double data rate architecture: two data transfers per clock cycle • Bidirectional data strobe (DQS) is transmitted and received with data, to be used in capturing data at the receiver • DQS is edge-aligned with data for reads and is centeraligned with data for writes • Differential clock inputs (CK and CK) • Four internal banks for concurrent operation • Data mask (DM) for write data • DLL aligns DQ and DQS transitions with CK transitions • Commands entered on each positive CK edge; data and data mask referenced to both edges of DQS • Burst ... |
Document |
NT5DS32M16CG Data Sheet
PDF 2.15MB |
Similar Datasheet
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | NT5DS32M16CS |
Nanya Techology |
512Mb DDR SDRAM | |
2 | NT5DS32M16AF |
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(NT5DSxxMxAF) 512Mb DDR SDRAM | |
3 | NT5DS32M16BF |
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(NT5DSxxMxBx) 512Mb DDR SDRAM | |
4 | NT5DS32M16BG |
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(NT5DSxxMxBx) 512Mb DDR SDRAM | |
5 | NT5DS32M16BS |
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(NT5DSxxMxBx) 512Mb DDR SDRAM | |
6 | NT5DS32M16BT |
Nanya Techology |
(NT5DSxxMxBx) 512Mb DDR SDRAM |