2SK1217 |
Part Number | 2SK1217 |
Manufacturer | Inchange Semiconductor |
Description | ·Drain Current –ID=8A@ TC=25℃ ·Drain Source Voltage- : VDSS=900V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed ... |
Features |
0; ID= 1mA
VGS(th) Gate Threshold Voltage
VDS= VGS; ID=1mA
RDS(on) Drain-Source On-stage Resistance VGS=10V; ID=4A
IGSS
Gate Source Leakage Current
VGS= ±30V;VDS= 0
IDSS
Zero Gate Voltage Drain Current
VDS=900V; VGS= 0
VSD
Forward On-Voltage
IS=8A; VGS=0
tr
Rise time
ton
Turn-on time
tf
Fall time
VGS=10V;ID=8A; RL=25Ω
toff
Turn-off time
2SK1217
MIN TYP. MAX UNIT
900
V
2.5
3.5
5.0
V
1.5 2.0
Ω
±100 nA
500 uA
1.0
1.5
V
230 350
ns
280 425
ns
160 240
ns
620 690
ns
Notice: ISC reserves the rights to make changes of the content herein the datasheet at any ... |
Document |
2SK1217 Data Sheet
PDF 203.80KB |
Similar Datasheet
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | 2SK121 |
Sony |
Silicon N Channel Junction FET | |
2 | 2SK1211 |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
3 | 2SK1212 |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
4 | 2SK1212-01 |
Fuji |
N-CHANNEL SILICON POWER MOS-FET | |
5 | 2SK1212-01R |
Fuji |
N-CHANNEL SILICON POWER MOS-FET | |
6 | 2SK1213 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |