Busque con el número de pieza junto con el fabricante o la descripción
2SK796 |
Click to view a larger image
| Part Number | 2SK796 |
| Manufacturer | Inchange Semiconductor |
| Description | ·Drain Current –ID=3A@ TC=25℃ ·Drain Source Voltage- : VDSS=800V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed ... |
| Features |
℃)
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID= 10mA
VGS(th) Gate Threshold Voltage
VDS=25 VGS; ID=1mA
RDS(on) Drain-Source On-stage Resistance VGS=10V; ID= 2A
IGSS
Gate Source Leakage Current
VGS= ±20V;VDS= 0
IDSS
Zero Gate Voltage Drain Current
VDS=640V; VGS= 0
ton
Turn-on time
toff
Turn-off time
VGS=10V;ID=2A; RL=100Ω
2SK796
MIN TYP MAX UNIT
800
V
1.0
5.0
V
3.5
5.0
Ω
±1
uA
0.1
mA
55
ns
150
ns
Notice： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The informat... |
| Document |
 2SK796 Data Sheet
PDF 197.94KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SK790 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 2 | 2SK790 |
Toshiba |
TRANSISTOR |
|
| 3 | 2SK791 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 4 | 2SK791 |
Toshiba Semiconductor |
Transistor |
|
| 5 | 2SK792 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 6 | 2SK792 |
Toshiba Semiconductor |
Transistor |
|
Desde 2024. D4U Semiconductor.
|