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2SK770 |
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| Part Number | 2SK770 |
| Manufacturer | Inchange Semiconductor |
| Description | ·Drain Current –ID=2A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ... |
| Features |
AL CHARACTERISTICS (TC=25℃)
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID= 1mA
VGS(th) Gate Threshold Voltage
VDS=25 V; ID=1mA
RDS(on) Drain-Source On-stage Resistance VGS=10V; ID= 1A
IGSS
Gate Source Leakage Current
VGS= ±20V;VDS= 0
IDSS
Zero Gate Voltage Drain Current
VDS=480V; VGS= 0
2SK770
MIN TYP MAX UNIT
600
V
1.0
5.0
V
3.5
5.0
Ω
±1
uA
100
uA
NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the a... |
| Document |
 2SK770 Data Sheet
PDF 234.87KB |
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