BUK452-60A Inchange Semiconductor N-Channel MOSFET Transistor Datasheet. existencias, precio

logo
Busque con el número de pieza junto con el fabricante o la descripción

BUK452-60A

Inchange Semiconductor
BUK452-60A
BUK452-60A BUK452-60A
zoom Click to view a larger image
Part Number BUK452-60A
Manufacturer Inchange Semiconductor
Description ·Drain Source Voltage- : VDSS=60V(Min) ·Low RDS(ON) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for Switched Mode ...
Features RACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID= 0.25mA VGS(th) RDS(on) Gate Threshold Voltage VDS=VGS; ID=1mA Drain-Source On-stage Resistance VGS=10V; ID=8.5A BUK452-60A BUK452-60B IGSS Gate Source Leakage Current VGS= ±30V;VDS= 0 IDSS Zero Gate Voltage Drain Current VDS=60V; VGS= 0 VSD Diode Forward Voltage IF=15A; VGS=0 Gfs Forward Transconductance VDS= 25V;ID= 8.5A tr Rise time ton Turn-on time tf Fall time VGS=10V;ID=3A;RGS=50Ω toff Turn-off time MIN TYP MAX UNIT 60 V 2.1 4.0 V 0.13 Ω 0.15 Ω ±10...

Document Datasheet BUK452-60A Data Sheet
PDF 228.77KB

Similar Datasheet

No. Parte # Fabricante Descripción Hoja de Datos
1 BUK452-60A
NXP
PowerMOS transistor Datasheet
2 BUK452-60B
NXP
PowerMOS transistor Datasheet
3 BUK452-60B
Inchange Semiconductor
N-Channel MOSFET Transistor Datasheet
4 BUK452-100A
NXP
PowerMOS transistor Datasheet
5 BUK452-100A
Inchange Semiconductor
N-Channel MOSFET Transistor Datasheet
6 BUK452-100B
NXP
PowerMOS transistor Datasheet
More datasheet from Inchange Semiconductor
logo    Desde 2024. D4U Semiconductor.   |   Contáctenos   |   Política de Privacidad