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BUK452-100B |
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| Part Number | BUK452-100B |
| Manufacturer | Inchange Semiconductor |
| Description | ·Drain Source Voltage- : VDSS=100V(Min) ·Low RDS(ON) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for Switched Mode... |
| Features |
AL CHARACTERISTICS (TC=25℃)
SYMBOL
PARAMETER
CONDITIONS
MIN TYP MAX UNIT
V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID= 0.25mA
100
V
VGS(th) Gate Threshold Voltage
VDS=VGS; ID=1mA
2.1
RDS(on)
Drain-Source On-stage Resistance
VGS=10V; ID=5.5A
BUK452-100A BUK452-100B
IGSS
Gate Source Leakage Current
VGS= ±30V;VDS= 0
4.0
V
0.25
Ω
0.3
Ω
±100 nA
IDSS
Zero Gate Voltage Drain Current
VDS=100V; VGS= 0
10
uA
VSD
Diode Forward Voltage
IF=11A; VGS=0
1.5
V
Gfs
Forward Transconductance
VDS= 25V；ID= 5.5A
3
S
tr
Rise time
25
40
ns
ton
Turn-on time
tf
Fall t... |
| Document |
 BUK452-100B Data Sheet
PDF 228.58KB |
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Desde 2024. D4U Semiconductor.
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