BU2527AW Inchange Semiconductor Silicon NPN Power Transistor Datasheet. existencias, precio

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BU2527AW

Inchange Semiconductor
BU2527AW
BU2527AW BU2527AW
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Part Number BU2527AW
Manufacturer Inchange Semiconductor
Description ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 800V(Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use i...
Features ACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 6A ;IB= 1.2A VBE(sat) Base-Emitter Saturation Voltage ICES Collector Cutoff Current hFE-1 DC Current Gain IC= 6A ;IB= 1.2A VCE=1500V,VBE=0 VCE=1500V,VBE=0;TC=125℃ IC= 1A ; VCE= 5V hFE-2 DC Current Gain IC= 6A ; VCE= 5V COB Output Capacitance IE= 0 ; VCB= 10V; ftest= 1MHz BU2527AW MIN TYP. MAX UNIT 800 V 7.5 V 5.0 V 1.3 V 0.25 ...

Document Datasheet BU2527AW Data Sheet
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