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GAP3SHT33-CAL |
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| Part Number | GAP3SHT33-CAL |
| Manufacturer | GeneSiC |
| Description | Silicon Carbide Power Schottky Diode Features • 3300 V Schottky rectifier • 210 °C maximum operating temperature • Positive temperature coefficient of VF • Fast switching speeds • Superior figure of m... |
| Features |
• 3300 V Schottky rectifier • 210 °C maximum operating temperature • Positive temperature coefficient of VF • Fast switching speeds • Superior figure of merit QC/IF Die Datasheet GAP3SHT33-CAL VRRM IF @ 25 oC QC = 3300 V = 0.3 A = 20 nC Advantages • Improved circuit efficiency (Lower overall cost) • Significantly reduced switching losses compare to Si PiN diodes • Ease of paralleling devices without thermal runaway • Smaller heat sink requirements • Low reverse recovery current • Low device capacitance Die Size = 1.39 mm x 1.39 mm Applications • Down Hole Oil Drilling, Geothermal Instrum... |
| Document |
 GAP3SHT33-CAL Data Sheet
PDF 214.79KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | GAP3SHT33-CAU |
GeneSiC |
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| 2 | GAP3SLT33-220FP |
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| 3 | GAP-AAA-PCI-005 |
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| 4 | GAP04N70 |
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| 5 | GAP05SLT80-CAL |
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| 6 | GAP07N70 |
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Desde 2024. D4U Semiconductor.
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