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2SD1575 |
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| Part Number | 2SD1575 |
| Manufacturer | Inchange Semiconductor |
| Description | ·High Breakdown Voltage- : VCBO= 1200V (Min) ·High Switching Speed ·High Reliability ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation AP... |
| Features |
OL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 1mA ; IC= 0
6
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 1A
5.0
V
VBE(sat) Base-Emitter Saturation Voltage
IC= 2A; IB= 1A
1.5
V
ICBO
Collector Cutoff Current
VCB= 750V ; IE= 0 VCB= 1200V ; IE= 0
50 μA 1.0 mA
IEBO
Emitter Cutoff Current
VEB= 6V ; IC= 0
50 μA
hFE
DC Current Gain
IC= 2A; VCE= 5V
2
Switching times
tstg
Storage Time
tf
Fall Time
IC= 2.5A; IB1(end)= 1.1A; LB= 10μH
9
μs
1.0 μs
NOTICE： ISC reserves the rights to make changes of the content herein t... |
| Document |
 2SD1575 Data Sheet
PDF 209.00KB |
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