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| Part Number | 2SC6090 |
| Manufacturer | Inchange Semiconductor |
| Description | ·Collector-Base Breakdown Voltage- : V(BR)CEO= 1500V (Min) ·High Speed Switching ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATION... |
| Features |
O(SUS) Collector-Emitter Sustaining Voltage IC= 100mA; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 7.2A; IB= 1.44A
VBE(sat) Base-Emitter Saturation Voltage
IC= 7.2A; IB= 1.44A
ICBO
Collector Cutoff Current
VCB=800V; IE= 0
ICES
Collector Cutoff Current
VCE=1500V; RBE= 0
IEBO
Emitter Cutoff Current
VEB= 4V; IC= 0
hFE-1
DC Current Gain
IC= 1A; VCE= 5V
hFE-2
DC Current Gain
IC= 8A; VCE= 5V
Switching times
tf
Fall Time
IC= 5A; IB1= 1A; IB2= -2A
MIN TYP. MAX UNIT
700
V
3.0
V
1.5
V
10 μA
1.0 mA
1.0 mA
15
5
7
0.2 μs
NOTICE： ISC reserves the rights to ma... |
| Document |
 2SC6090 Data Sheet
PDF 170.54KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SC6090LS |
Sanyo |
NPN Triple Diffused Planar Silicon Transistor |
|
| 2 | 2SC6091 |
Sanyo |
NPN Triple Diffused Planar Silicon Transistor |
|
| 3 | 2SC6092LS |
Sanyo |
NPN Triple Diffused Planar Silicon Transistor |
|
| 4 | 2SC6093 |
INCHANGE |
NPN Transistor |
|
| 5 | 2SC6093LS |
Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistor |
|
| 6 | 2SC6094 |
Sanyo Semicon Device |
NPN Epitaxial Planar Silicon Transistor |
|
Desde 2024. D4U Semiconductor.
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