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2SC5027 |
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| Part Number | 2SC5027 |
| Manufacturer | Inchange Semiconductor |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 800V(Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ABSOLUTE MAXIMUM RATINGS(Ta=25℃) ... |
| Features |
ector- Base Breakdown Voltage IC= 1mA; IE= 0
1100
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 1.5A; IB= 0.3A
2.0
V
VBE(sat) Base-Emitter Saturation Voltage
IC= 1.5A; IB= 0.3A
1.5
V
ICBO
Collector Cutoff Current
VCB= 800V; IE= 0
10 μA
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
10 μA
hFE1
DC Current Gain
IC= 0.2A; VCE= 5V
10
40
hFE2
DC Current Gain
IC= 1A; VCE= 5V
8
COB
Output Capacitance
IE= 0; VCB= 10V; f= 1MHz
60
pF
fT
Current-Gain—Bandwidth Product
IE= 0.2A; VCE= 10V
12
MHz
hFE1 ： N： 10 ~ 20 R：15 ~ 30 O： 20 ~ 40
NOTICE： ISC reserves the rights to ... |
| Document |
 2SC5027 Data Sheet
PDF 213.88KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SC5021 |
Panasonic Semiconductor |
NPN TRANSISTOR |
|
| 2 | 2SC5022 |
Hitachi Semiconductor |
NPN TRANSISTOR |
|
| 3 | 2SC5022 |
Renesas |
Silicon NPN Transistor |
|
| 4 | 2SC5023 |
Hitachi Semiconductor |
Silicon NPN Epitaxial Type Transistor |
|
| 5 | 2SC5024 |
Hitachi Semiconductor |
Silicon NPN Epitaxial Type Transistor |
|
| 6 | 2SC5025 |
Hitachi |
Silicon NPN Transistor |
|
Desde 2024. D4U Semiconductor.
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