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2N6898 |
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| Part Number | 2N6898 |
| Manufacturer | Inchange Semiconductor |
| Description | ·SOA is power-dissipation limited ·Nanosecond switching speeds ·Linear transfer characteristics ·High input impedance ·Majority carrier device APPLICATIONS · The 2N6898 is designed for application su... |
| Features |
ineprint.cn
INCHANGE Semiconductor
isc P-Channel Mosfet Transistor
isc Product Specification
2N6898
·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= -1mA VGS(TH) Gate Threshold Voltage VDS= VGS; ID= -0.25mA RDS(ON) Drain-Source On-stage Resistance VGS= -10V; ID= -15.8A IGSS Gate Source Leakage Current VGS= -20V;VDS= 0 IDSS Zero Gate Voltage Drain Current VDS= -80V,VGS= 0 VSD Diode Forward Voltage IF= -25A;VGS= 0 MIN MAX UNIT -100 V -2 -4 V 0.2 Ω -100 nA -1 uA 1.6 V isc website：www.iscsemi.cn 2 isc & isc... |
| Document |
 2N6898 Data Sheet
PDF 41.65KB |
Similar Datasheet
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