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2N6770 |
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| Part Number | 2N6770 |
| Manufacturer | Inchange Semiconductor |
| Description | ·VGS Rated at ±20V ·Silicon Gate for fast switching speeds ·IDSS 、RDS(ON) ,specified at elevated temperature ·Low drive requirements APPLICATIONS designed for high voltage ,high speed application ,suc... |
| Features |
ication
2N6770
·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 1mA VGS(TH) Gate Threshold Voltage VDS= VGS; ID= 1mA RDS(ON) Drain-Source On-stage Resistance VGS= 10V; ID= 7.75A IGSS Gate Source Leakage Current VGS= 20V;VDS= 0 IDSS Zero Gate Voltage Drain Current VDS= 500V; VGS= 0 VSD Diode Forward Voltage IF= 12A; VGS= 0 MIN MAX UNIT 500 V 24V 0.4 Ω 100 nA 1 mA 1.6 V isc website：www.iscsemi.cn 2 isc & iscsemi is registered trademark PDF pdfFactory Pro www.fineprint.cn ... |
| Document |
 2N6770 Data Sheet
PDF 41.35KB |
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