Busque con el número de pieza junto con el fabricante o la descripción
2N6764 |
Click to view a larger image
| Part Number | 2N6764 |
| Manufacturer | Inchange Semiconductor |
| Description | ·VGS Rated at ±20V ·Silicon Gate for fast switching speeds ·IDSS 、RDS(ON) ，specified at elevated temperature ·Low drive reqirements APPLICATIONS designed for high power ,high speed application ,such a... |
| Features |
2N6764
·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 1mA VGS(TH) Gate Threshold Voltage VDS= VGS; ID= 1mA RDS(ON) Drain-Source On-stage Resistance VGS= 10V; ID= 24A IGSS Gate Source Leakage Current VGS= 20V;VDS= 0 IDSS Zero Gate Voltage Drain Current VDS= 100V; VGS= 0 VSD Diode Forward Voltage IF= 38A; VGS= 0 MIN MAX UNIT 100 V 24V 0.055 Ω 100 nA 1 mA 1.9 V isc website：www.iscsemi.cn 2 isc & iscsemi is registered trademark PDF pdfFactory Pro www.fineprint.cn ... |
| Document |
 2N6764 Data Sheet
PDF 41.42KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2N6760 |
Fairchild Semiconductor |
N-Channel Power MOSFET |
|
| 2 | 2N6760 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 3 | 2N6761 |
Fairchild Semiconductor |
N-Channel Power MOSFET |
|
| 4 | 2N6761 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 5 | 2N6762 |
Fairchild Semiconductor |
N-Channel Power MOSFET |
|
| 6 | 2N6762 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
Desde 2024. D4U Semiconductor.
|