2N6758 Inchange Semiconductor N-Channel MOSFET Transistor Datasheet. existencias, precio

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2N6758

Inchange Semiconductor
2N6758
2N6758 2N6758
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Part Number 2N6758
Manufacturer Inchange Semiconductor
Description ·VGS Rated at ±20V ·Silicon Gate for fast switching speeds ·IDSS 、RDS(ON) ,specified at elevated temperature ·Low drive reqirements APPLICATIONS designed for high power ,high speed application ,such a...
Features 6758
·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 1mA VGS(TH) Gate Threshold Voltage VDS= VGS; ID= 1mA RDS(ON) Drain-Source On-stage Resistance VGS= 10V; ID= 6A IGSS Gate Source Leakage Current VGS= 20V;VDS= 0 IDSS Zero Gate Voltage Drain Current VDS= 200V; VGS= 0 VSD Diode Forward Voltage IF= 9A; VGS= 0 MIN MAX UNIT 200 V 24V 0.4 Ω 100 nA 1 mA 1.6 V isc website:www.iscsemi.cn 2 isc & iscsemi is registered trademark PDF pdfFactory Pro www.fineprint.cn ...

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