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2SA1606 |
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| Part Number | 2SA1606 |
| Manufacturer | Inchange Semiconductor |
| Description | ·High Collector-Emitter Breakdown Voltage- V(BR)CEO= -160V (Min) ·Large Current Capacity ·Complement to Type 2SC4159 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation... |
| Features |
CEO Collector-Emitter Breakdown Voltage IC= -1mA; RBE= ∞
V(BR)EBO Emitter-Base Breakdown Voltage
IE= -1mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= -500mA; IB= -50mA
VBE(on) Base-Emitter On Voltage
IC= -10mA; VCE= -5V
ICBO
Collector Cutoff Current
VCB= -120V; IE= 0
IEBO
Emitter Cutoff Current
VEB= -4V; IC= 0
hFE
DC Current Gain
IC= -300mA; VCE= -5V
hFE Classifications D E 60-120 100-200 2SA1606 MIN TYP. MAX UNIT 180 V 160 V 6 V -0.5 V -1.5 V -10 μA -10 μA 60 200 NOTICE： ISC reserves the rights to make changes of the content herein the datashe... |
| Document |
 2SA1606 Data Sheet
PDF 213.58KB |
Similar Datasheet
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|---|---|---|---|---|
| 1 | 2SA1600 |
Shindengen Electric Mfg.Co.Ltd |
Switching Power Transistor |
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| 2 | 2SA1600 |
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| 3 | 2SA1600 |
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| 4 | 2SA1601 |
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| 5 | 2SA1601 |
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| 6 | 2SA1601 |
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Desde 2024. D4U Semiconductor.
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