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2SA1007 |
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| Part Number | 2SA1007 |
| Manufacturer | Inchange Semiconductor |
| Description | ·High Current Capability ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -150V(Min.) ·Complement to Type 2SC2337 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ... |
| Features |
ter-Base Breakdown Voltage
IE= -1mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= -5A; IB= -0.5A
ICBO
Collector Cutoff Current
VCB= -150V; IE= 0
IEBO
Emitter Cutoff Current
VEB= -6V; IC= 0
hFE
DC Current Gain
IC= -1A ; VCE= -5V
fT
Current-Gain—Bandwidth Product
IC= -1A ; VCE= -10V
2SA1007
MIN TYP. MAX UNIT
-150
V
-150
V
-6
V
-2.0 V
-50 μA
-50 μA
40
320
50
MHz
Notice： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applicati... |
| Document |
 2SA1007 Data Sheet
PDF 195.56KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SA100 |
ETC |
Ge PNP Drift Transistor |
|
| 2 | 2SA1001 |
Inchange Semiconductor |
Silicon PNP Power Transistor |
|
| 3 | 2SA1002 |
INCHANGE |
Silicon PNP Power Transistor |
|
| 4 | 2SA1003 |
Inchange Semiconductor |
Silicon PNP Power Transistor |
|
| 5 | 2SA1006 |
NEC |
PNP/NPN TRANSISTOR |
|
| 6 | 2SA1006 |
SavantIC |
Silicon POwer Transistors |
|
Desde 2024. D4U Semiconductor.
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