Busque con el número de pieza junto con el fabricante o la descripción
2N3019 |
Click to view a larger image
| Part Number | 2N3019 |
| Manufacturer | Inchange Semiconductor |
| Description | INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2N3019 ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 140 V VCEO ... |
| Features |
ion Voltage
VBE(sat) Base-Emitter Saturation Voltage
ICBO Collector Cutoff Current
IC=0.1mA ; IE=0 IC=150mA; IB= 15mA IC= 0.5A; IB= 50mA IC= 150mA ; IB=15mA VCE= 90V; IB=0
IEBO Emitter Cutoff Current
VEB= 5.0V; IC=0
hFE-1 hFE-2
DC Current Gain DC Current Gain
IC= 0.1mA ; VCE= 10V IC= 10mA ; VCE= 10V
hFE-3
DC Current Gain
IC= 150mA ; VCE= 10V
hFE-3 hFE-4
DC Current Gain DC Current Gain
IC= 0.5A ; VCE= 10V IC= 1A ; VCE= 10V
fT Current Gain-Bandwidth Product
IC= 50mA ; VCE= 10V;f=20MHz
MIN MAX UNIT 80 V 140 V 7V
0.2 V 0.5 V 1.1 V 1.5 uA 0.1 uA 50 90 100 300 50 15 100 400 MHz
isc... |
| Document |
 2N3019 Data Sheet
PDF 87.18KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2N3010 |
Motorola |
NPN silicon low-power transistor |
|
| 2 | 2N3011 |
Central Semiconductor |
SILICON NPN TRANSISTOR |
|
| 3 | 2N3011 |
Seme LAB |
Bipolar NPN Device |
|
| 4 | 2N3011 |
Motorola |
SWITCHING TRANSISTOR |
|
| 5 | 2N3012 |
Seme LAB |
Bipolar PNP Device |
|
| 6 | 2N3012 |
Central Semiconductor |
Small Signal Transistors |
|
Desde 2024. D4U Semiconductor.
|