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KTB1241 |
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| Part Number | KTB1241 |
| Manufacturer | KEC |
| Description | SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. FEATURE ᴌHigh Breakdown Voltage and High Current : VCEO=-80V, IC=-1A. ᴌLow VCE(sat) ᴌComplementary to KTD1863. MAXIMUM RATING (Ta=25ᴱ) CHARA... |
| Features |
eakdown Voltage DC Current Gain Collector-Emitter Saturation Voltage Transition Frequency
ICBO IEBO V(BR)CEO hFE (Note) VCE(sat) fT
VCB=-60V, IE=0 VEB=-4V, IC=0 IC=-1mA, IB=0 VCE=-3V, IC=-100mA IC=-500mA, IB=-50mA VCE=-5V, IC=-50mA, f=30MHz
Collector Output Capacitance
Cob VCB=-10V, IE=0, f=1MHz
Note : hFE Classification O:70ᴕ140, Y:120ᴕ240, GR:200ᴕ400
MIN. -
-80 70 -
TYP. -
100 25
MAX. -1 -1 400 -0.4 -
UNIT ỌA ỌA V
V MHz
pF
1998. 8. 21
Revision No : 1
1/2
KTB1241
COLLECTOR CURRENT I C (mA)
DC CURRENT GAIN h FE
-1000 -100
I C - VBE
Ta=25 C VCE =-5V
-10
-1
-0.1 0
-0.2 -0.4... |
| Document |
 KTB1241 Data Sheet
PDF 75.96KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | KTB1234T |
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| 2 | KTB1260 |
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| 3 | KTB1124 |
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PNP Silicon Epitaxial Planar Transistor |
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| 4 | KTB1124 |
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| 5 | KTB1124 |
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| 6 | KTB1151 |
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| 7 | KTB1366 |
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| 8 | KTB1366 |
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| 10 | KTB1366 |
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Desde 2024. D4U Semiconductor.
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