Busque con el número de pieza junto con el fabricante o la descripción
3DD325 |
Click to view a larger image
| Part Number | 3DD325 |
| Manufacturer | Inchange Semiconductor |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat)= 0.5V(Max) @IC= 0.5A APPLICATIONS ·Designed for B/W TV vertical output applications. A... |
| Features |
50
V
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 0.5mA; IC= 0
4
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 0.5A; IB= 50mA
ICBO Collector Cutoff Current
VCB= 50V; IE= 0
0.5 V 10 μA
ICEO Collector Cutoff Current
VCE= 15V; IB= 0
0.1 mA
IEBO Emitter Cutoff Current
VEB= 4V; IC= 0
0.1 mA
hFE DC Current Gain
IC= 0.5A; VCE= 3V
50 200
hFE Classifications Green Blue Purple Grey 50-70 70-100 100-140 140-200 isc website：www.iscsemi.cn 2 ... |
| Document |
 3DD325 Data Sheet
PDF 189.20KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 3DD3010A1 |
Huajing Microelectronics |
Silicon NPN Transistor |
|
| 2 | 3DD3015A1 |
Huajing Microelectronics |
Silicon NPN Transistor |
|
| 3 | 3DD3015A1-H |
Huajing Microelectronics |
Silicon NPN bipolar transistor |
|
| 4 | 3DD3015A3 |
Huajing Microelectronics |
Silicon NPN Transistor |
|
| 5 | 3DD301B |
Inchange |
Silicon Power Transistor |
|
| 6 | 3DD301C |
Inchange |
Silicon Power Transistor |
|
Desde 2024. D4U Semiconductor.
|