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2SB891 |
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| Part Number | 2SB891 |
| Manufacturer | Inchange Semiconductor |
| Description | ·High Collector Current -IC= -2A ·Good Linearity of hFE ·Low Collector Saturation Voltage ·Complement to Type 2SD1189 ·Minimum Lot-to-Lot variations for robust device performance and reliable operatio... |
| Features |
(BR)CBO Collector-Base Breakdown Voltage
IC= -50μA; IE= 0
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -1mA; IB= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= -50μA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage
IC= -2A; IB= -0.2A
ICBO
Collector Cutoff Current
VCB= -20V; IE= 0
IEBO
Emitter Cutoff Current
VEB= -4V; IC= 0
hFE
DC Current Gain
IC= -0.5A; VCE= -3V
2SB891
MIN TYP. MAX UNIT
-40
V
-32
V
-5
V
-0.8 V
-1.0 μA
-1.0 μA
82
390
hFE Classifications P Q R 82-180 120-270 180-390 NOTICE： ISC reserves the rights to make changes of the content herein t... |
| Document |
 2SB891 Data Sheet
PDF 213.14KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SB891 |
Rohm |
Epitaxial Planar PNP Silicon Transistor |
|
| 2 | 2SB891F |
Rohm |
Medium Power Transistor |
|
| 3 | 2SB891F |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 4 | 2SB892 |
Sanyo Semicon Device |
PNP Transistor |
|
| 5 | 2SB892 |
Jiangsu Changjiang Electronics |
PNP Transistor |
|
| 6 | 2SB892 |
ON Semiconductor |
PNP / NPN Epitaxial Planar Silicon Transistors |
|
Desde 2024. D4U Semiconductor.
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