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2SJ126 |
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| Part Number | 2SJ126 |
| Manufacturer | Inchange Semiconductor |
| Description | ·Low Drain-Source ON Resistance ·High Forward Transfer Admittance ·Low Leakage Current ·Enhancement-Mode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIO... |
| Features |
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= -10mA
VGS(TH) Gate Threshold Voltage
VDS= VGS; ID= -1mA
RDS(ON) Drain-Source On-stage Resistance VGS= -10V; ID= -5A
IGSS
Gate Source Leakage Current
VGS= -20V;VDS= 0
IDSS
Zero Gate Voltage Drain Current
VDS= -60V,VGS= 0
VSD
Diode Forward Voltage
IF=-10 A;VGS= 0
2SJ126
MIN MAX UNIT
-60
V
-1.5 -3.5
V
0.4
Ω
-100 nA
-1
mA
-4.5
V
NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for... |
| Document |
 2SJ126 Data Sheet
PDF 215.77KB |
Desde 2024. D4U Semiconductor.
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