MT3S113TU |
Part Number | MT3S113TU |
Manufacturer | Toshiba (https://www.toshiba.com/) Semiconductor |
Description | MT3S113TU TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S113TU VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications FEATURES • Low Noise Figure:NF = 1.15dB (typ.) (@ f=1G... |
Features |
• Low Noise Figure:NF = 1.15dB (typ.) (@ f=1GHz) • High Gain:|S21e|2 = 12.5dB (typ.) (@ f=1GHz) 2.1±0.1 1.7±0.1 Unit: mm 0.3-+00..015 1 2 3 2.0±0.1 0.65±0.05 0.166±0.05 0.7±0.05 Marking 3 R7 1.1. Base 2.2. Emitter 3.3. Collector 1 2 Absolute Maximum Ratings (Ta = 25°C) UFM JEDEC - JEITA - TOSHIBA 2-2U1B Weight : 6.6mg (typ.) Characteristics Symbol Rating Unit Collector-emitter voltage Collector-emitter voltage Emitter-base voltage Collector-current Base-current Collector power dissipation Junction temperature Storage temperature range VCES 13 V VCEO 5.3 V VEB... |
Document |
MT3S113TU Data Sheet
PDF 216.65KB |
Similar Datasheet
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | MT3S113 |
Toshiba Semiconductor |
Silicon-Germanium NPN Epitaxial Planar Type Transistor | |
2 | MT3S113P |
Toshiba Semiconductor |
Silicon-Germanium NPN Epitaxial Planar Type Transistor | |
3 | MT3S111 |
Toshiba Semiconductor |
Silicon-Germanium NPN Epitaxial Planar Type Transistor | |
4 | MT3S111P |
Toshiba Semiconductor |
Silicon-Germanium NPN Epitaxial Planar Type Transistor | |
5 | MT3S111TU |
Toshiba Semiconductor |
Silicon-Germanium NPN Epitaxial Planar Type Transistor | |
6 | MT3S11FS |
Toshiba Semiconductor |
Silicon NPN Epitaxial Planar Type Transistor |