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MT3S113 |
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| Part Number | MT3S113 |
| Manufacturer | Toshiba (https://www.toshiba.com/) Semiconductor |
| Description | TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S113 VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications MT3S113 Unit: mm FEATURES • Low Noise Figure:NF=1.15dB (typ.) (@ ... |
| Features |
• Low Noise Figure:NF=1.15dB (typ.) (@ f=1GHz) • High Gain:|S21e|2=11.8dB (typ.) (@ f=1GHz) Marking R7 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit S-Mini JEDEC TO-236 JEITA SC-59 TOSHIBA 2-3F1A Weight: 0.012 g (typ.) Collector-emitter voltage Collector-emitter voltage Emitter-base voltage Collector-current Base-current Collector power dissipation Junction temperature Storage temperature range VCES 13 V VCEO 5.3 V VEBO 0.6 V IC 100 mA IB 10 mA PC(Note1) 800 mW Tj 150 °C Tstg −55 to 150 °C Note1... |
| Document |
 MT3S113 Data Sheet
PDF 242.79KB |
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