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MT3S111P |
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| Part Number | MT3S111P |
| Manufacturer | Toshiba (https://www.toshiba.com/) Semiconductor |
| Description | TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S111P MT3S111P VHF-UHF Low-Noise, Low-Distortion Amplifier Applications Features • Low-Noise Figure: NF=0.95 dB (typ.) (@f=1 GHz) • ... |
| Features |
• Low-Noise Figure: NF=0.95 dB (typ.) (@f=1 GHz) • High Gain: |S21e|2=10.5 dB (typ.) (@f=1 GHz) Unit: mm Marking R5 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit PW-Mini JEDEC ⎯ JEITA SC-62 TOSHIBA 2-5K1A Weight:0.05 g (typ.) Collector-emitter voltage Collector-emitter voltage Emitter-base voltage Collector-current Base-current Collector power dissipation Collector power dissipation Junction temperature Storage temperature range VCES 13 V VCEO 6 V VEBO 0.6 V IC 100 mA IB 10 mA PC 300 mW PC (Note 1) 1 W Tj 150 °C Tstg −55 to 1... |
| Document |
 MT3S111P Data Sheet
PDF 200.39KB |
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