MT3S106FS |
Part Number | MT3S106FS |
Manufacturer | Toshiba (https://www.toshiba.com/) Semiconductor |
Description | MT3S106FS TOSHIBA TRANSISTOR SILICON-GERMANIUM NPN EPITAXIAL PLANER TYPE MT3S106FS VCO OSCILLETOR STAGE VHF-UHF Low Noise Amplifier Application FEATURES • Low Noise Figure :NF=1.2dB (@f=2GHz) • High... |
Features |
• Low Noise Figure :NF=1.2dB (@f=2GHz) • High Gain:|S21e|2=10dB (@f=2GHz) Marking 3 41 2 1 +0.02 -0.04 0.6 ±0.05 0.35±0.05 0.15±0.05 Unit:mm 1.0±0.05 0.8±0.05 1 3 0.1±0.05 2 0.1±0.05 0.2±0.05 0.48 0.1±0.05 Absolute Maximum Ratings (Ta = 25°C) Characteristics Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector-Current Base-Current Collector Power dissipation Junction temperature Storage temperature Range Symbol VCBO VCEO VEBO IC IB PC(Note 1) Tj Tstg Rating 13 6 1 80 20 100 150 −55~150 Unit V V V mA mA mW °C °C 1.BASE 2.EM IT TER 3.COLLECTOR fSM JEDEC ... |
Document |
MT3S106FS Data Sheet
PDF 138.84KB |
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