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P5NA80 |
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| Part Number | P5NA80 |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and g... |
| Features |
-source Voltage
ID Drain Current (continuous) at Tc = 25 oC ID Drain Current (continuous) at Tc = 100 oC IDM( •) Drain Current (pulsed) Ptot Total Dissipation at Tc = 25 oC Derating Factor VISO Insulation Withstand Voltage (DC) Tstg Storage Temperature Tj Max. Operating Junction Temperature ( •) Pulse width limited by safe operating area November 1996 3 2 1 TO-220 3 2 1 ISOWATT220 INTERNAL SCHEMATIC DIAGRAM Value STP5NA80 STP5NA80FI 800 800 ± 30 4.7 2.8 3 1.8 19 19 125 45 1 0.36 2000 -65 to 150 150 Unit V V V A A A W W/oC V oC oC 1/10 www.DataSheet4U.com www.DataSheet4U.co... |
| Document |
 P5NA80 Data Sheet
PDF 303.35KB |
Similar Datasheet
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