MS1337 |
Part Number | MS1337 |
Manufacturer | Advanced Power Technology |
Title | RF & MICROWAVE TRANSISTORS |
Features |
• 175 MHz • 12.5 VOLTS • POUT = 30W MINIMUM • GP = 10 dB GAIN • COMMON EMITTER CONFIGURATION DESCRIPTION: The MS1337 is a 12.5 volt epitaxial silicon NPN planar transistor designed primarily for Class C, VHF communication applications. The MS1337 utilizes an emitter ballasted die geometry to withsta... |
Document |
MS1337 Data Sheet
PDF 103.92KB |
Similar Datasheet
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | MS1336 |
Advanced Power Technology |
RF & MICROWAVE TRANSISTORS | |
2 | MS1329 |
Advanced Power Technology |
RF & MICROWAVE TRANSISTORS | |
3 | MS13N30 |
Bruckewell |
N-Channel MOSFET | |
4 | MS13N50 |
Bruckewell |
N-Channel MOSFET | |
5 | MS13P21 |
Bruckewell |
P-Channel MOSFET | |
6 | MS1 |
BEL |
SLOW BLOW MICRO FUSE |