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IXTN30N100L |
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| Part Number | IXTN30N100L |
| Manufacturer | IXYS |
| Description | Power MOSFETs with IXTB 30N100L Extended FBSOA IXTN 30N100L N-Channel Enhancement Mode Avalanche Rated VDSS = 1000 V ID25 = 30 A ≤RDS(on) 0.45 Ω Symbol VDSS VDGR V GS VGSM ID25 IDM IAR EAR EAS P ... |
| Features |
• Designed for linear operation • International standard packages • Molding epoxies meet UL 94 V-0 flammability classification • SOT-227B miniBLOC with aluminium nitride isolation Symbol VDSS VGS(th) I GSS IDSS RDS(on) Test Conditions (TJ = 25°C unless otherwise specified) Characteristic Values Min. Typ. Max. VGS = 0 V, ID = 1 mA VDS = VGS, ID = 250 μA V = ± 30 V , V = 0 GS DC DS VDS = VDSS, VGS = 0 V TJ = 25°C TJ = 125°C VGS = 20 V, ID = 0.5 • ID25, Note 1 1000 3 V 5V ± 200 nA 50 μA 1 mA 0.45 Ω Applications • Programmable loads • Current regulators • DC-DC converters • Battery char... |
| Document |
 IXTN30N100L Data Sheet
PDF 93.59KB |
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Desde 2024. D4U Semiconductor.
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