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1SS422 |
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| Part Number | 1SS422 |
| Manufacturer | Toshiba (https://www.toshiba.com/) |
| Description | TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS422 High-Speed Switching Applications Low forward voltage VF(2) = 0.23 V (typ.) @ IF = 5 mA Small package suitable for mounting on a small ... |
| Features |
4 mg (typ.) temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
*: This is the absolute maximum rating for a single diode. Where two diodes are used, the absolute maximum rating
per diode is 75 that for the single diode.
Electrical Characteristics (Ta = 25°C)
Characteristics
Forward voltage
Reverse current Tot... |
| Document |
 1SS422 Data Sheet
PDF 316.98KB |
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