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1SS420 |
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| Part Number | 1SS420 |
| Manufacturer | Toshiba (https://www.toshiba.com/) |
| Description | TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS420 High-Speed Switching Applications • Low reverse current: IR = 5 μA (max) 1SS420 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteri... |
| Features |
design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
* Mounted on a glass-epoxy circuit board of 20 × 20 mm,
pad dimensions of 4 × 4 mm.
Electrical Characteristics (Ta = 25°C)
Characteristic
Forward voltage Reverse current Total capacitance
Symbol
VF (1) VF (2) VF (3)
IR CT
Test Circuit
Test Condition
― IF = 1 mA
― IF = 10 mA
― IF = 200 mA
― VR = 30 V
― VR = 0, f = 1 MHz
Min Typ. Max U... |
| Document |
 1SS420 Data Sheet
PDF 169.16KB |
Similar Datasheet
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