1SS424 |
Part Number | 1SS424 |
Manufacturer | Toshiba (https://www.toshiba.com/) |
Description | TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS424 High-Speed Switching Applications z Low forward voltage : VF (3) = 0.50 V (typ.) 1SS424 Unit: mm Absolute Maximum Ratings (Ta = 25°C) ... |
Features |
ppropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
*: Mounted on a glass-epoxy circuit board of 20 × 20 mm,
pad dimensions of 4 × 4 mm.
Electrical Characteristics (Ta = 25°C)
Characteristic Forward voltage Reverse current Total capacitance
Symbol
VF (1) VF (2) VF (3) IR (1) IR (2)
CT
Test Circuit
Test Condition
― IF = 1 mA
― IF = 5 mA
― IF = 200 mA
― VR = 10 V
― VR = 20 V
― VR = 0, f = 1 MHz
Min... |
Document |
1SS424 Data Sheet
PDF 136.84KB |
Similar Datasheet
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