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MAGX-000035-01000S |
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| Part Number | MAGX-000035-01000S |
| Manufacturer | MA-COM |
| Description | The MAGX-000035-01000X is a gold-metalized unmatched Gallium Nitride (GaN) on Silicon Carbide RF power transistor suitable for a variety of RF power amplifier applications. Using state of the art wafe... |
| Features |
GaN Depletion-Mode HEMT Microwave Transistor Common-Source configuration No internal matching Broadband Class AB operation RoHS* Compliant +50 V Typical Operation MTTF = 600 years Description The MAGX-000035-01000X is a gold-metalized unmatched Gallium Nitride (GaN) on Silicon Carbide RF power transistor suitable for a variety of RF power amplifier applications. Using state of the art wafer fabrication processes, these high performance transistors provide high gain, efficiency, bandwidth, and ruggedness over multiple octave bandwidths for today’s demanding application need... |
| Document |
 MAGX-000035-01000S Data Sheet
PDF 585.07KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | MAGX-000035-010000 |
MA-COM |
Power Transistor |
|
| 2 | MAGX-000035-01000P |
MA-COM |
Pulsed Transistor |
|
| 3 | MAGX-000035-015000 |
MA-COM |
Power Transistor |
|
| 4 | MAGX-000035-01500S |
MA-COM |
Power Transistor |
|
| 5 | MAGX-000025-150000 |
MA-COM |
Power Transistor |
|
| 6 | MAGX-011086 |
MA-COM |
GaN Wideband Transistor |
|
Desde 2024. D4U Semiconductor.
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