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CM50MD1-12H |
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| Part Number | CM50MD1-12H |
| Manufacturer | Mitsubishi Electric Semiconductor |
| Description | MITSUBISHI IGBT MODULES CM50MD1-12H MEDIUM POWER SWITCHING USE FLAT-BASE TYPE, INSULATED TYPE CM50MD1-12H ¡IC ... 50A ¡VCES .... |
| Features |
MD1-12H
MEDIUM POWER SWITCHING USE FLAT-BASE TYPE, INSULATED TYPE
MAXIMUM RATINGS INVERTER PART
Symbol VCES VGES IC ICM IE (Note. 1) IEM (Note. 1) PC (Note. 3)
(Tj = 25°C)
Parameter Collector-emitter voltage Gate-emitter voltage Collector Current Emitter Current Maximum collector dissipation G – E Short C – E Short TC = 25°C PULSE TC = 25°C PULSE Tf = 25°C Condition (Note. 2) (Note. 2) Rating 600 ±20 50 100 50 100 104 Unit V V A A A A W CONVERTER PART Symbol VRRM Ea IO IFSM I2t Parameter Repetitive peak reverse voltage Recommended AC input voltage DC output current Surge (non-repetiti... |
| Document |
 CM50MD1-12H Data Sheet
PDF 127.11KB |
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Desde 2024. D4U Semiconductor.
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