UT28F256LV |
Part Number | UT28F256LV |
Manufacturer | Aeroflex Circuit Technology |
Description | The UT28F256LV amorphous silicon anti-fuse PROM is a high performance, asynchronous, radiation-hardened, 32K x 8 programmable memory device. The UT28F256LV PROM features fully asychronous operation re... |
Features |
q Programmable, read-only, asynchronous, radiationhardened, 32K x 8 memory - Supported by industry standard programmer
q 65ns maximum address access time (-55 oC to +125 oC)
q Three-state data bus
q Low operating and standby current - Operating: 50.0mA maximum @15.4MHz • Derating: 1.5mA/MHz - Standby: 1.0mA maximum (post-rad) q Radiation-hardened process and design; total dose irradiation testing to MIL-STD-883, Method 1019 - Total dose: 1E6 rad(Si) - LETTH(0.25) ~ 100 MeV-cm2/mg - SEL Immune >128 MeV-cm2/mg - Saturated Cross Section cm2 per bit, 1.0E-11 - 1.2E-8 errors/device-day, Adams 90% g... |
Document |
UT28F256LV Data Sheet
PDF 66.26KB |
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