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STD3NM60N N-Channel MOSFET Datasheet


STD3NM60N

INCHANGE
STD3NM60N
Part Number STD3NM60N
Manufacturer INCHANGE
Title MOSFET N-CH 600V 3.3A DPAK
Description Isc N-Channel MOSFET Transistor ·FEATURES ·Drain Current –ID= 3.3A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resis...
Features
·Drain Current
  –ID= 3.3A@ TC=25℃
·Drain Source Voltage- : VDSS= 600V(Min)
·Static Drain-Source On-Resistance : RDS(on) = 1.8Ω(Max)
·100% avalanche tested
·Low input capacitance and gate charge
·Minimum Lot-to-Lot variations for robust device performance and reliable operation
·APPLICATIONS
·Switchi...

Document Datasheet STD3NM60N datasheet pdf (256.64KB)
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10 units: 0.957 USD
1 units: 1.17 USD
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STD3NM60N

STMicroelectronics
STD3NM60N
Part Number STD3NM60N
Manufacturer STMicroelectronics
Title N-channel Power MOSFET
Description This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a.
Features Order codes STD3NM60N VDSS @TJmax 650 V RDS(on) max. < 1.8 Ω ID 3.3 A
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance TAB 3 1 DPAK Applications
■ Switching applications Description This device is an N-channel Power MOSFET developed using the second.

Document STD3NM60N datasheet pdf



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