SC8205 |
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| Part Number | SC8205 |
| Manufacturer | SIKEWEI ELECTRONICS |
| Description | SHENZHEN SIKEWEI ELECTRONICS CO., LTD. SC8205(:S&CIC0692) 20V N-Channel Enhancement-Mode MOSFET RDS(ON), Vgs@1.8V, Ids@2.0A = 75mΩ RDS(ON), Vgs@2.5V, Ids@3.5A = 38mΩ RDS(ON), Vgs@4.0V, Ids@4.5A = 30mΩ RDS(ON), Vgs@4.5V, Ids@4.5A = 28mΩ RDS(ON), Vgs@10V, Ids@5.0A = 25mΩ Features ¾ Advanced trench... |
| Features | ¾ Advanced trench process technology ¾ High Density Cell Design For Ultra Low On-Resistance ¾ High Power and Current handing capability ¾ Ideal for Li ion battery pack applications Internal Schematic Diagram D ra in 1 D ra in 2 G at e1 G at e2 S ou rc e 1 S ou rc e 2 N-Channel MOSFET Maximum Ratings and Thermal Characteristics (TA = 25oC unless otherwise noted) Parameter Symbol Drain-S... |
| Datasheet |
 SC8205 Data Sheet
PDF 336.39KB |
| Distributor | Stock | Price | Buy |
|---|
SC8205 |
| Part Number | SC8205 |
| Manufacturer | FUMAN ELECTRONICS |
| Title | 20V N-channel enhancement mode MOS FET |
| Description | SHENZHEN FUMAN ELECTRONICS CO., LTD. 5 SC8205 (：S&CIC0706) 20V N 6 MOS 20V N-Channel Enhancement-Mode MOSFET RDS(ON), Vgs@1.8V, Ids@2.0A = 75mΩ RDS(ON), Vgs@2.5V, Ids@3.5A = 38mΩ RDS(ON), Vgs@4.0V, Ids@4.5A = 30mΩ RDS(ON), Vgs@4.5V, Ids@4.5A = 28mΩ RDS(ON), Vgs@10V, Ids@5.0A = 25mΩ D . |
| Features |
S = 20V, VGS = 0V VGS = ±12V, ID=0uA
gfs VDS = 15V, ID = 6.0A
23
20 ---
0.5 ----
-53.0 30.0 23.0 22.0 20.0
---29
-75.0 38.0 30.0 28.0 25.0 1.5
1 ±100
--
V
mΩ
V uA nA S
Version 1.1
SHENZHEN FUMAN ELECTRONICS CO., LTD.
SC8205 (：S&CIC0706)
20V N MOS
（On） （On） （Off） （Off）
Qg
Qgs
VDS = 10V,ID = 6A VGS = 4.5V
Qgd
6.24 8.11 1.64 2.13 nC 1.34 1.74
td(on)
10.4 20.8
tr td(off. |
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